Search Results - Panteleev, V.V.
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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density by Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)Get full text
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