Харвестер відкритої науки НАН України

Малошумящие усилители на основе SiGe-HBT для сверхширокополосных систем

von Popov, V. P., Sidorenko, V. P.
Veröffentlicht 2013

Temperature dependences of SnTe linear expansion coefficient

von Rogacheva, E.I., Popov, V.P., Nashchekina, O.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Noncontact method of thermal linear expansion coefficient determination for various materials in temperature range 500 to 2500°C

von Borzukh, A.S., Popov, V.P., Savchenko, V.S., Skibina, L.V., Chernik, M.M., Yushchenko, K.A.
Veröffentlicht in Functional Materials (2004)

Comparison studies of tile/fiber systems manufactured from Kharkov injection molded and Kuraray SCSN-81 scintillators

von Nemashkalo, A.A., Popov, V.P., Sorokin, P.V., Zatserklyany, A.E., Borisenko, A.Y., Senchishin, V.G.
Veröffentlicht in Вопросы атомной науки и техники (2000)

NSC KIPT participation in the CMS (CERN) collaboration

von Levchuk, L.G., Marekhin, S.V., Nemashkalo, A.A., Popov, V.P., Sorokin, P.V., Zatserklianiy, A.E.
Veröffentlicht in Вопросы атомной науки и техники (2001)

Spontaneous magnetostriction in the Gd-Y system: analysis of phase transformations

von Beznosov, A.B., Fertman, E.L., Eremenko, V.V., Pal-Val, P.P., Popov, V.P., Chebotayev, N.N.
Veröffentlicht in Физика низких температур (2001)

Creation of composite scintillators with a short decay time

von Krech, A.V., Kofanov, D.O., Khromiuk, I.F., Okrushko, O.M., Gerasymov, Ia.V., Karavaeva, N.L., Levchuk, L.G., Popov, V.P., Khabuseva, S.U.
Veröffentlicht in Problems of Atomic Science and Technology (2023)

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

von Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

von Datsenko, L.I., Auleytner, J., Misiuk, A., Klad'ko, V.P., Machulin, V.F., Bak-Misiuk, J., Zymierska, D., Antonova, I.V., Melnyk, V.M., Popov, V.P., Czosnyka, T., Choinski, J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)