Харвестер відкритої науки НАН України

Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors

за авторством Glinchuk, K.D., Prokhorovich, A.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals

за авторством Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

About influences of different actions on spectra of impurity photoluminescence in GaAs

за авторством Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Analysis of luminescence method for determination of Cd₁₋xZnxTe composition

за авторством Glinchuk, K.D., Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)