Харвестер відкритої науки НАН України

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

за авторством Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Nanocrystalline silicon carbide films for solar cells

за авторством Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Photostimulated Ga diffusion in zinc sulfide

за авторством Bacherikov, Yu.Yu., Optasyuk, S.V., Rodionov, V.E., Stadnik, A.A.
Опубліковано в: Functional Materials (2004)

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide

за авторством Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Flexible electroluminescent panels

за авторством Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

3C-6H transformation in heated cubic silicon carbide 3C-SiC

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Effect of annealing mode on ZnS-Cu,CI properties

за авторством Bacherikov, Yu.Yu., Golovina, I.S., Kitsyuk, N.V., Mukhlyo, M.A., Rodionov, V.E., Stadnyk, O.A.
Опубліковано в: Functional Materials (2004)

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Silicon carbide defects and luminescence centers in current heated 6H-SiC

за авторством Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)