Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect von S. V. Luniov, L. I. Panasiuk, S. A. Fedosov

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Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect von S. V. Lunov, L. I. Panasiuk, S. A. Fedosov

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Changing of the anisotropy parameter of mobility in n-Ge single crystals with heterogeneous distribution of doping impurity von D. A. Zakharchuk, Y. V. Koval, L. V. Yashchynskiy, S. A. Fedosov

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