Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic von S. I. Krukovskij

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Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD von N. M. Vakiv, S. I. Krukovskij, Ju. Larkin, Ju. Avksentev, R. S. Krukovskij

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Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method von N. M. Vakiv, S. I. Krukovskij, V. R. Timchishin, A. P. Vaskiv

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