Antisymmetric contribution to the magnetoresistance of heterostructure in the in-plane magnetic field by A. S. Bogoljubskij, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, M. V. Jakunin

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Scaling laws under quantum Hall effect for a smooth disorder potential by S. V. Gudina, A. S. Klepikova, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin

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Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells by Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells by S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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On the question of critical exponents universality in the quantum Hall effect regime by Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin

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Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures by A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide HgTe quantum well: "extremum loop” model and effects of cubic symmetry by S. V. Gudina, A. S. Bogolubskiy, V. N. Neverov, K. V. Turutkin, N. G. Shelushinina, M. V. Yakunin

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Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination by Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, A. P. Savelev, M. V. Jakunin

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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures by A. P. Savelyev, Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin

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Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination by Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime by Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide by A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov

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HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential by S. V. Gudina, Yu. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. R. Popov, E. V. Deriushkina, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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Activation transport under quantum Hall regime in HgTe-based heterostructure by S. V. Gudina, V. N. Neverov, E. G. Novik, E. V. Ilchenko, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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