Antisymmetric contribution to the magnetoresistance of heterostructure in the in-plane magnetic field von A. S. Bogoljubskij, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, M. V. Jakunin

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Scaling laws under quantum Hall effect for a smooth disorder potential von S. V. Gudina, A. S. Klepikova, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin

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Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells von S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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On the question of critical exponents universality in the quantum Hall effect regime von Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin

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Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures von A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin

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Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide HgTe quantum well: "extremum loop” model and effects of cubic symmetry von S. V. Gudina, A. S. Bogolubskiy, V. N. Neverov, K. V. Turutkin, N. G. Shelushinina, M. V. Yakunin

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Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, A. P. Savelev, M. V. Jakunin

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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures von A. P. Savelyev, Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin

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Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination von Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime von Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin

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The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide von A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov

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HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential von S. V. Gudina, Yu. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. R. Popov, E. V. Deriushkina, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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Activation transport under quantum Hall regime in HgTe-based heterostructure von S. V. Gudina, V. N. Neverov, E. G. Novik, E. V. Ilchenko, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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