Antisymmetric contribution to the magnetoresistance of heterostructure in the in-plane magnetic field

за авторством A. S. Bogoljubskij, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, M. V. Jakunin
Опубліковано 2017

The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells

за авторством S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin
Опубліковано 2013

Scaling laws under quantum Hall effect for a smooth disorder potential

за авторством S. V. Gudina, A. S. Klepikova, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin
Опубліковано 2019

Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells

за авторством Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin
Опубліковано 2013

On the question of critical exponents universality in the quantum Hall effect regime

за авторством Ju. G. Arapov, S. V. Gudina, E. V. Derjushkina, N. G. Shelushinina, M. V. Jakunin
Опубліковано 2019

Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide HgTe quantum well: "extremum loop” model and effects of cubic symmetry

за авторством S. V. Gudina, A. S. Bogolubskiy, V. N. Neverov, K. V. Turutkin, N. G. Shelushinina, M. V. Yakunin
Опубліковано 2021

Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures

за авторством A. P. Savelev, S. V. Gudina, Ju. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. V. Jakunin
Опубліковано 2017

Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination

за авторством Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, A. P. Savelev, M. V. Jakunin
Опубліковано 2015

Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures

за авторством A. P. Savelyev, Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin
Опубліковано 2021

Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination

за авторством Ju. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin
Опубліковано 2015

Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime

за авторством Ju. G. Arapov, S. V. Gudina, V. N. Neverov, S. G. Novokshonov, A. S. Klepikova, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin
Опубліковано 2013

The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide

за авторством A. S. Klepikova, Ju. G. Arapov, S. V. Gudina, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Jakunin, B. N. Zvonkov
Опубліковано 2017

HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential

за авторством S. V. Gudina, Yu. G. Arapov, V. N. Neverov, S. M. Podgornykh, M. R. Popov, E. V. Deriushkina, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky
Опубліковано 2019

Activation transport under quantum Hall regime in HgTe-based heterostructure

за авторством S. V. Gudina, V. N. Neverov, E. G. Novik, E. V. Ilchenko, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky
Опубліковано 2017