Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect von S. V. Luniov, L. I. Panasiuk, S. A. Fedosov

Volltext

Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band von S. V. Luniov, O. V. Burban, P. F. Nazarchuk

Volltext

Features of radiation-defect annealing in n-Ge single crystals irradiated with high-energy electrons von S. V. Luniov, A. I. Zimych, M. V. Khvyshchun, V. T. Maslyuk, I. G. Megela

Volltext