Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect von S. V. Lunov, L. I. Panasiuk, S. A. Fedosov

Volltext

Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band von S. V. Lunov, O. V. Burban, P. F. Nazarchuk

Volltext

The method of shear modulus determination for n-Ge and n-Si single crystals von V. I. Shvabiuk, A. V. Matkova, C. V. Lunov

Volltext

Features of radiation-defect annealing in n-Ge single crystals irradiated with high-energy electrons von S. V. Lunov, A. I. Zimych, M. V. Khvyshchun, V. T. Masliuk, I. H. Mehela

Volltext

Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons von S. V. Lunov, A. I. Zimych, P. F. Nazarchuk, V. T. Masliuk, I. H. Mehela

Volltext

Determination of the activation energy of A-center in the uniaxially deformed n-Ge single crystals von S. V. Lunov, A. I. Zimych, P. F. Nazarchuk, S. A. Moroz, L. M. Polishchuk, V. T. Masliuk, I. H. Mehela

Volltext