Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect by S. V. Lunov, L. I. Panasiuk, S. A. Fedosov

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Calculation of the ground-state ionization energy for shallow donors in n-Ge single crystals within the Δ1-model for the conduction band by S. V. Lunov, O. V. Burban, P. F. Nazarchuk

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The method of shear modulus determination for n-Ge and n-Si single crystals by V. I. Shvabiuk, A. V. Matkova, C. V. Lunov

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Features of radiation-defect annealing in n-Ge single crystals irradiated with high-energy electrons by S. V. Lunov, A. I. Zimych, M. V. Khvyshchun, V. T. Masliuk, I. H. Mehela

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Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons by S. V. Lunov, A. I. Zimych, P. F. Nazarchuk, V. T. Masliuk, I. H. Mehela

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Determination of the activation energy of A-center in the uniaxially deformed n-Ge single crystals by S. V. Lunov, A. I. Zimych, P. F. Nazarchuk, S. A. Moroz, L. M. Polishchuk, V. T. Masliuk, I. H. Mehela

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