Харвестер відкритої науки НАН України

New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

von Merabtine, N., Amourache, S., Saidi, Y., Zaabat, M., Kenzai, Ch.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Active layer – semi-insulating substrate interface effect on GaAs MESFET components

von Belgat, M., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs

von Khemissi, S., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y., Amourache, S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Active inductances controlled in GaAs MESFET technology

von Benbouza, M.S., Kenzai-Azizi, C., Merabtine, N., Saidi, Y., Amourache, S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

An improved contribution to optimize Si and GaAs solar cell performances

von Merabtine, N., Amourache, S., Bouaouina, M., Zaabat, M., Saidi, Y., Kenzai, C.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)