p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy von Sapaev, B., Saidov, A.S., Sapaev, I.B.

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Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure von Sapaev, I.B., Sapaev, B., Babajanov, D.B.

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Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x von Sapaev, B., Saidov, A.S., Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Dmitruk, I.N., Galak, N.P., Sapaev, I.B.

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