Influence of the ultrasonic irradiation on properties of the injection sensor based on pSi-nCdS-n+CdS — structure and surface states density pSi-nCdS — heterojunction von I. B. Sapaev, Sh. A. Mirsagatov

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Sublinear reverse current-voltage characteristics of thick film structures based on CdTe von Sh. A. Mirsagatov, A. S. Achilov, B. N. Zaverjukhin

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Thin Film Detector CdTe Structures with Schottky Barrier von Sh. A. Mirsagatov, A. S. Achilov, B. N. Zaverjukhin

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Spectral Properties of Mn+CdS-nCdShTe1-x-pZnhCd1-xTe-Mo structures for an injection photodetector von Sh. A. Mirsagatov, O. K. Ataboev, B. N. Zaverjukhin

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Investigation of the intermediate layers of a diode with a Schottky barrier Al-pCdTe-Mo von Sh. A. Mirsagatov, S. A. Muzafarova, A. S. Achilov, A. A. Movlonov

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Mechanism of photocurrent amplification in injection photodiodes based on a photosensitive polycrystalline CdS film von I. B. Sapaev, Sh. A. Mirsagatov, B. Sapaev, R. R. Kabulov

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Cascade injection photodetector for the 500−650-nm spectral range on the basis of solid solutions of A2B6 compounds von Sh. A. Mirsagatov, B. N. Zaveryukhin, O. K. Ataboev, N. N. Zaviryukhina

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Cascade injection photodetector for the 500−650-nm spectral range on the basis of solid solutions of A2B6 compounds von Sh. A. Mirsagatov, B. N. Zaverjukhin, O. K. Ataboev, N. N. Zaverjukhina

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