Харвестер відкритої науки НАН України

Influence of the ultrasonic irradiation on properties of the injection sensor based on pSi-nCdS-n+CdS — structure and surface states density pSi-nCdS — heterojunction

за авторством I. B. Sapaev, Sh. A. Mirsagatov
Опубліковано 2014

Sublinear reverse current-voltage characteristics of thick film structures based on CdTe

за авторством Sh. A. Mirsagatov, A. S. Achilov, B. N. Zaverjukhin
Опубліковано 2014

Thin Film Detector CdTe Structures with Schottky Barrier

за авторством Sh. A. Mirsagatov, A. S. Achilov, B. N. Zaverjukhin
Опубліковано 2013

Spectral Properties of Mn+CdS-nCdShTe1-x-pZnhCd1-xTe-Mo structures for an injection photodetector

за авторством Sh. A. Mirsagatov, O. K. Ataboev, B. N. Zaverjukhin
Опубліковано 2013

Investigation of the intermediate layers of a diode with a Schottky barrier Al-pCdTe-Mo

за авторством Sh. A. Mirsagatov, S. A. Muzafarova, A. S. Achilov, A. A. Movlonov
Опубліковано 2012

Mechanism of photocurrent amplification in injection photodiodes based on a photosensitive polycrystalline CdS film

за авторством I. B. Sapaev, Sh. A. Mirsagatov, B. Sapaev, R. R. Kabulov
Опубліковано 2015

Cascade injection photodetector for the 500−650-nm spectral range on the basis of solid solutions of A2B6 compounds

за авторством Sh. A. Mirsagatov, B. N. Zaveryukhin, O. K. Ataboev, N. N. Zaviryukhina
Опубліковано 2013

Cascade injection photodetector for the 500−650-nm spectral range on the basis of solid solutions of A2B6 compounds

за авторством Sh. A. Mirsagatov, B. N. Zaverjukhin, O. K. Ataboev, N. N. Zaverjukhina
Опубліковано 2013