Харвестер відкритої науки НАН України

Highly sensitive photodetector based on ge double-barrier punch-through structure

von O. A. Abdulkhaev, D. M. Jodgorova, A. V. Karimov, Sh. M. Kuliev
Veröffentlicht 2015

Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

von O. A. Abdulkhaev, D. M. Jodgorova, A. V. Karimov, A. A. Jakubov, Sh. M. Kuliev
Veröffentlicht 2018

Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

von A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev, Kh. Aripova, Ju. Khidirnazarova, Sh. M. Kuliev
Veröffentlicht 2018