Харвестер відкритої науки НАН України

Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

von Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Pressure-induced structural transformations in Si:V and Si:V, Mn

von Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
Veröffentlicht in Физика и техника высоких давлений (2008)

Investigation of superlattice structure parameters using quasi-forbidden reflections

von Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)