Харвестер відкритої науки НАН України

Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit

за авторством Kashirina, N.I., Kislyuk, V.V., Sheinkman, M.K.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Properties of the shallow D-centers in semiconductors with polar and covalent binding

за авторством Kashirina, N.I., Lakhno, V.D., Sychyov, V.V., Sheinkman, M.K.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds

за авторством Korsunskaya, N. E., Markevich, I. V., Dzhumaev, B. R., Borkovskaya, L. V., Sheinkman, M. K.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures

за авторством Borkovska, L.V., Korsunska, N.O., Kushnirenko, V.I., Sadofyev, Yu.G., Sheinkman, M.K.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

The nature of red emission in porous silicon

за авторством Khomenkova, L.Yu., Korsunska, N.E., Bulakh, B.M., Sheinkman, M.K., Stara, T.R.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

About the nature of diffusion anisotropy in CdS crystals

за авторством Borkovskaya, L.V., Dzhumaev, B.R., Khomenkova, L.Yu., Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)