Харвестер відкритої науки НАН України

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

von Sokolov, V.N., Shwarts, Yu.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Theory of relaxation for spontaneous emission of Bloch oscillation radiation

von Sokolov, V.N., Iafrate, G.J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

von Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Self-consistent method for optimization of parameters of diode temperature sensors

von Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Ultra-high field transport in GaN-based heterostructures

von Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)