Харвестер відкритої науки НАН України

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

за авторством Sokolov, V.N., Shwarts, Yu.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Theory of relaxation for spontaneous emission of Bloch oscillation radiation

за авторством Sokolov, V.N., Iafrate, G.J.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

за авторством Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Self-consistent method for optimization of parameters of diode temperature sensors

за авторством Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Ultra-high field transport in GaN-based heterostructures

за авторством Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)