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Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces von Dmitruk, N.L., Borkovskaya, O.Yu., Kostylyov, V.E., Sachenko, A.V., Sokolovskiy, I.O.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)Volltext
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