Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching за авторством Tomashyk, V.M., Kravtsova, A.S., Tomashyk, Z.F., Stratiychuk, I.B., Galkin, S.M.

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Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions за авторством Pavlovich, I.I., Tomashik, Z.F., Stratiychuk, I.B., Tomashik, V.M., Savchuk, O.A., Kravtsova, A.S.

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Chemical polishing of InAs, InSb, GaAs and GaSb за авторством Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.

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Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition за авторством Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.

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Nanodimensional formations on the CdTe and ZnₓCd₁₋ₓTe surfaces at chemical etching за авторством Tomashyk, Z.F., Tomashyk, V.M., Hnativ, I.I., Stratiychuk, I.B., Moravec, P., Franc, J., Ivanitska, V.

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Peculiarities of ZnSe dissolution in H₂O₂—HBr -ethylene glycol (oxalic acid) etchant compositions за авторством Kravtsova, A.S., Tomashyk, V.M., Tomashyk, Z.F., Stratiychuk, I.B., Kuryk, A.O., Kalytchuk, S.M., Galkin, S.M.

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