Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition von Glinchuk, K.D., Litovchenko, N.M., Strilchuk, O.N.

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Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide von Glinchuk, K.D., Litovchenko, N.M., Strilchuk, O.N.

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On the origin of 300 K near-band-edge luminescence in CdTe von Glinchuk, K.D., Litovchenko, N.M., Strilchuk, O.N.

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About influences of different actions on spectra of impurity photoluminescence in GaAs von Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.

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Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals von Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.

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