Search Results - Svetlichny, A. M.

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    The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating by Agueev, O.A., Svetlichny, A.M.

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  2. 2
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    Газоанализаторы на основе пористого карбида кремния by Moskovchenko, N. N., Svetlichny, A. M.

    Published 2006
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    Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing by Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

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    Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters by Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.

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