The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

за авторством Agueev, O.A., Svetlichny, A.M.
Опубліковано 2001

Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

за авторством Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.
Опубліковано 2000

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

за авторством Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Опубліковано 2002

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

за авторством Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
Опубліковано 2004