Харвестер відкритої науки НАН України

The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

von Agueev, O.A., Svetlichny, A.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

von Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)