The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating von Agueev, O.A., Svetlichny, A.M.

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Газоанализаторы на основе пористого карбида кремния von Moskovchenko, N. N., Svetlichny, A. M.

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Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing von Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.

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Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.

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Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.

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