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Sviridova, O.V.
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Sviridova, O.V.
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Sviridova, O.V.
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Influence of initial defects on defect formation process in ion doped silicon
by
Smyntyna, V.A.
,
Sviridova, O.V.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2009)
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2
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
by
Smyntyna, V.A.
,
Sviridova, O.V.
Published in
Semiconductor Physics Quantum Electronics & Optoelectronics
(2010)
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Влияние слоя поликристаллического кремния на механизмы токопереноса в контактах «металл — p-кремний»...
by
Smyntyna, V. A.
,
Kulinich, О. А.
,
Yatsunskii, I. R.
,
Sviridova, O. V.
,
Marchuk, I. A.
Published 2011
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Related Subjects
current transport
metal — p-Si contact
polycrystalline silicon
контакт «металл — p-кремний»
поликристаллический кремний
токоперенос