Role of dislocations in formation of ohmic contacts to heavily doped n-Si von A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk

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The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet

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