Role of dislocations in formation of ohmic contacts to heavily doped n-Si by A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk

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The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts by A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet

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