Search Results - Tretyak, O.V.

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  1. 1
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    Spin-dependent current in silicon p-n junction diodes by Tretyak, O.V., Kozonushchenko, O.I., Krivokhizha, K.V., Revenko, A.S.

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  2. 2
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    Synthesis of charged silica films of porous structure by Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.

    Published in Functional Materials (2008)
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  3. 3
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    Aвтоматизированный спектрометр глубоких уровней для исследования полупроводниковых структур by Boiko, Yu. V., Kuznetsov, G. V., Savitsky, S. М., Tretyak, O. V.

    Published 2007
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  4. 4
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    Self-consistent model of strong coupling theory of electron correlations in disordered crystals by Repetsky, S.P., Tretyak, O.V., Vyshivanaya, I.G., Shastun, V.V.

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  5. 5
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    Воздействие импульсов прямого тока на время жизни неосновных носителей заряда в р+–n-диоде by Kushnirenko, V. V., Ninidze, G. K., Pavljuk, S. P., Savitsky, S. M., Tretyak, O. V.

    Published 2007
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  6. 6
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    Effect of pressure on intersystem transitions in aromatic amine molecules by Skrishevsky, Yu.A., Vakhnin, A.Yu., Skrishevsky, V.A., Gavrilchenko, I.V., Tretyak, O.V.

    Published in Functional Materials (2006)
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  7. 7
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    Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 by Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.

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