Харвестер відкритої науки НАН України

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

von Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)