Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Опубліковано 2001

Effect of the charge state of traps on the transport current in the SiC/Si heterostructure

за авторством Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Опубліковано 2000

Properties of SiGe/Si heterostructures fabricated by ion implantation technique

за авторством Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
Опубліковано 1999