On some important results in semiconductor surface science obtained in Ukraine during the independence years (1991–2016) by V. G. Litovchenko

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On some important results in semiconductor surface science obtained in Ukraine during the independence years (1991–2016) by V. G. Litovchenko

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A Nobel Prize-grade result. Academician of the NAS of Ukraine Vadym Evgenovych Lashkaryov: the outstanding Physicist of the 20-th century, the discoverer of a p-n-junction (to the... by V. G. Litovchenko

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Surface photovoltage spectroscopy research of solar silicon recombination parameters by V. G. Litovchenko

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My scientific contacts with V.E. Lashkarev by V. G. Litovchenko

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Analog of the Davydov splitting in carbon graphite-like structures by V. G. Litovchenko

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Analog of the Davydov splitting in carbon graphite-like structures by V. G. Litovchenko

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Electron-hole Fermi liquid in nanosized semiconductor structures by V. G. Litovchenko, A. A. Grygoriev

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Mechanism of adsorption-catalytic activity at the nanostructured surface of silicon doped with clusters of transition metals and their oxides by V. G. Litovchenko, T. I. Gorbanyuk, V. S. Solntsev

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Nano-size phase formation at acoustically stimulated ion beam synthesis by V. G. Litovchenko, V. P. Melnik, B. M. Romanjuk

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Anisotropy of conductivity in bilayer graphene with relatively shifted layers by V. G. Litovchenko, A. I. Kurchak, M. V. Strikha

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Two-channel gettering of recombination-active impurity in polycrystalline solar silicon by V. G. Litovchenko, V. M. Naseka, A. A. Evtukh

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Activation of catalytic properties of metal nanoclusters by R. M. Balabai, T. I. Gorbanyuk, V. G. Litovchenko, H. N. Chernikova

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Dopant depth profile modification during mass Spectrometric analysis of multilayer nanostructures by A. A. Efremov, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, B. M. Romanyuk

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The study of solar cells with back side contacts at low illumination by A. P. Gorban, V. P. Kostylyov, V. G. Litovchenko, A. V. Sachenko, A. A. Serba, I. O. Sokolovskyi, V. V. Chernenko

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Formation of silicon nanoclusters in buried ultra-thin oxide layers by O. S. Oberemok, V. G. Litovchenko, D. V. Gamov, V. G. Popov, V. P. Melnik, Yo. Gudymenko, V. A. Nikirin, I. M. Khatsevich

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Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films by I. P. Lisovskyy, V. G. Litovchenko, S. O. Zlobin, M. V. Voitovych, I. M. Khatsevich, I. Z. Indutnyy, P. E. Shepeliavyi, O. F. Kolomys

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Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer by A. V. Sachenko, V. P. Kostylev, V. G. Litovchenko, V. G. Popov, B. M. Romanyuk, V. V. Chernenko, V. M. Naseka, T. V. Slusar, S. I. Kyrylova, F. F. Komarov

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Research of recombination characteristics of Cz-Si implanted with iron ions by D. V. Gamov, O. I. Gudymenko, V. P. Kladko, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, Yu. O. Polishchuk, B. M. Romaniuk, V. V. Chernenko, V. M. Naseka

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