Dopant depth profile modification during mass Spectrometric analysis of multilayer nanostructures за авторством A. A. Efremov, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, B. M. Romanyuk

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Formation of silicon nanoclusters in buried ultra-thin oxide layers за авторством O. S. Oberemok, V. G. Litovchenko, D. V. Gamov, V. G. Popov, V. P. Melnik, Yo. Gudymenko, V. A. Nikirin, I. M. Khatsevich

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Investigation of the Phase Interfaces in Periodic Multilayer Mo/Si Structures, Using the Method of Mass-Spectrometry of Neutral Particles за авторством Ju. P. Pershin, V. A. Sevrjukova, E. N. Zubarev, A. S. Oberemok, V. P. Melnik, B. N. Romanjuk, V. G. Popov, P. M. Litvin

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient за авторством T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk

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Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer за авторством A. V. Sachenko, V. P. Kostylev, V. G. Litovchenko, V. G. Popov, B. M. Romanyuk, V. V. Chernenko, V. M. Naseka, T. V. Slusar, S. I. Kyrylova, F. F. Komarov

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Research of recombination characteristics of Cz-Si implanted with iron ions за авторством D. V. Gamov, O. I. Gudymenko, V. P. Kladko, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, Yu. O. Polishchuk, B. M. Romaniuk, V. V. Chernenko, V. M. Naseka

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