Dopant depth profile modification during mass Spectrometric analysis of multilayer nanostructures von A. A. Efremov, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, B. M. Romanyuk

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Formation of silicon nanoclusters in buried ultra-thin oxide layers von O. S. Oberemok, V. G. Litovchenko, D. V. Gamov, V. G. Popov, V. P. Melnik, Yo. Gudymenko, V. A. Nikirin, I. M. Khatsevich

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Investigation of the Phase Interfaces in Periodic Multilayer Mo/Si Structures, Using the Method of Mass-Spectrometry of Neutral Particles von Ju. P. Pershin, V. A. Sevrjukova, E. N. Zubarev, A. S. Oberemok, V. P. Melnik, B. N. Romanjuk, V. G. Popov, P. M. Litvin

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient von T. M. Sabov, O. S. Oberemok, O. V. Dubikovskyi, V. P. Melnik, V. P. Kladko, B. M. Romanyuk, V. G. Popov, Yo. Gudymenko, N. V. Safriuk

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Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer von A. V. Sachenko, V. P. Kostylev, V. G. Litovchenko, V. G. Popov, B. M. Romanyuk, V. V. Chernenko, V. M. Naseka, T. V. Slusar, S. I. Kyrylova, F. F. Komarov

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Research of recombination characteristics of Cz-Si implanted with iron ions von D. V. Gamov, O. I. Gudymenko, V. P. Kladko, V. G. Litovchenko, V. P. Melnik, O. S. Oberemok, V. G. Popov, Yu. O. Polishchuk, B. M. Romaniuk, V. V. Chernenko, V. M. Naseka

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