High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm von M. S. Kukurudziak, O. P. Andreeva, V. M. Lipka

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Photodetector resistant to background light noise with extended dynamic range of input signals von V. M. Lipka, V. V. Riukhtin, Yu. H. Dobrovolskyi

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