Properties of original and irradiated phosphide-gallium LEDs von M. Y. Chumak, P. G. Lytovchenko, I. V. Petrenko, D. P. Stratilat, V. P. Tartachnyk

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Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs von T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, M. B. Pinkovska, D. P. Stratilat, V. P. Tartachnyk

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Electrophysical characteristics of initial and irradiated GaAsP LEDs structures von O. V. Konoreva, P. H. Lytovchenko, O. I. Radkevych, V. M. Popov, V. P. Tartachnyk, V. V. Shlapatska

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Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents von V. H. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons von O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs von T. I. Mosiuk, R. M. Vernydub, P. H. Lytovchenko, Yu. B. Myroshnichenko, D. P. Stratilat, V. P. Tartachnyk, V. V. Shlapatska

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Degradation and recovery features of irradiated GAP LEDs von O. P. Budnyk, R. M. Vernydub, O. I. Kyrylenko, P. H. Lytovchenko, O. I. Radkevych, D. P. Stratilat, V. P. Tartachnyk

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Low doses effect in GaP light-emitting diodes von O. M. Hontaruk, O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, O. I. Radkevych, V. P. Tartachnyk

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Acoustic-stimulated relaxation of GaAs1–khPkh LEDs electroluminescence intensity von O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, Ya. M. Olikh, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions von O. M. Hontaruk, O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons von O. V. Konoreva, M. V. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Influence of radiation on the electrophysical parameters of GaAsP LEDs von R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, P. H. Lytovchenko, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko

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Spectral characteristics of initial and irradiated GaAsP LEDs von R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko, V. V. Shlapatska

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Surface distribution of the emitting intensity of GaP light-emitting diodes von O. V. Konoreva, P. H. Lytovchenko, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons von R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk

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Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes von O. I. Vlasenko, V. P. Veleshchuk, Z. K. Vlasenko, M. P. Kyseliuk, P. H. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska

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