Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes von Ya. Ya. Kudryk, V. S. Slipokurov

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Fluctuations of piezoelectric polarization in III-nitride quantum wells von A. V. Zinovchuk, D. A. Stepanchykov, R. Y. Vasylieva, V. S. Slipokurov

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Fluctuations of piezoelectric polarization in III-nitride quantum wells von A. V. Zinovchuk, D. A. Stepanchikov, R. Y. Vasylieva, V. S. Slipokurov

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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors von V. S. Slipokurov, M. N. Dub, A. K. Tkachenko, Ya. Ya. Kudryk

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Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics von Ya. Ya. Kudryk, V. V. Shynkarenko, V. S. Slipokurov, R. I. Bigun, Ya. Kudryk

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Hybrid-integrated version of SBD amplitude detector intended for the 400-600 GHz frequency range von A. V. Zorenko, A. V. Bychok, V. V. Shynkarenko, Ya. Ya. Kudryk, V. S. Slipokurov

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Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes von P. M. Romanets, R. V. Konakova, M. S. Boltovets, V. V. Basanets, Ya. Ya. Kudryk, V. S. Slipokurov

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes von P. M. Romanets, A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. V. Basanets, R. V. Konakova, V. S. Slipokurov, A. A. Khodin, V. A. Pilipenko, V. V. Shynkarenko

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Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP von A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova

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