Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes by Ya. Ya. Kudryk, V. S. Slipokurov

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Fluctuations of piezoelectric polarization in III-nitride quantum wells by A. V. Zinovchuk, D. A. Stepanchykov, R. Y. Vasylieva, V. S. Slipokurov

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Fluctuations of piezoelectric polarization in III-nitride quantum wells by A. V. Zinovchuk, D. A. Stepanchikov, R. Y. Vasylieva, V. S. Slipokurov

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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors by V. S. Slipokurov, M. N. Dub, A. K. Tkachenko, Ya. Ya. Kudryk

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Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics by Ya. Ya. Kudryk, V. V. Shynkarenko, V. S. Slipokurov, R. I. Bigun, Ya. Kudryk

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Hybrid-integrated version of SBD amplitude detector intended for the 400-600 GHz frequency range by A. V. Zorenko, A. V. Bychok, V. V. Shynkarenko, Ya. Ya. Kudryk, V. S. Slipokurov

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Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes by P. M. Romanets, R. V. Konakova, M. S. Boltovets, V. V. Basanets, Ya. Ya. Kudryk, V. S. Slipokurov

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes by P. M. Romanets, A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. V. Basanets, R. V. Konakova, V. S. Slipokurov, A. A. Khodin, V. A. Pilipenko, V. V. Shynkarenko

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Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP by A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova

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