InAs photodiodes (Review. Part IV) von A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, S. P. Trotsenko

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Trotsenko. InSb photodiodes (Review. Part III) von A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, S. P. Trotsenko

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InSb Photodiodes (Review, Part I) von A. V. Sukach, V. V. Tetorkin, I. M. Matiiuk, A. I. Tkachuk

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InSb Photodiodes (Review, Part II) von A. V. Sukach, V. V. Tetorkin, I. M. Matiiuk, A. I. Tkachuk

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InAs photodiodes (review) von A. V. Sukach, V. V. Tetorkin, I. M. Matiiuk, A. I. Tkachuk

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Photoelectrical properties of p+-inp/n-ingaasp/n-inp double heterojunctions von S. I. Krukovskyi, A. V. Sukach, V. V. Tetorkin, I. O. Mrykhin, Yu. S. Mykhashchuk

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Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes von S. I. Krukovskyi, A. V. Sukach, V. V. Tetorkin, I. O. Mrykhin, Yu. S. Mykhashchuk

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Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe von A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn

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Electrical properties of In/p-pbte structures von H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych

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Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes von A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn

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Effect of surface conductivity on electrical properties of mesa-structure InAs p—n-junctions von A. V. Sukach, V. V. Tetorkin, I. O. Mazarchuk, M. M. Krolevets, V. I. Lukianenko, I. H. Lutsyshyn

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Peculiarities of preparation of CdTe p-n junctions and carrier transport in them von A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk

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Electrical and photoelectrical properties of a-SICN/c-SI heterojunctions von A. V. Sukach, V. V. Tetorkin, V. I. Ivashchenko, O. K. Porada, A. O. Kozak, A. I. Tkachuk, A. T. Voroshchenko

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Structure and properties of the coatings of the Al–B–Si–C system deposited by magnetron sputtering von A. O. Kozak, V. I. Ivashchenko, P. L. Skrynskyi, V. B. Muratov, V. V. Tetorkin, A. Sukach, O. K. Synelnychenko, O. I. Olifan

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Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes von V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko

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