Харвестер відкритої науки НАН України

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films

за авторством Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Potentiality of the composite fulleren based carbon films as the stripper foils for tandem accelerators

за авторством Vasin, A.V., Matveeva, L.A., Kozeratskaya, G.N., Rusavsky, A.V., Totsky, Yu.I., Vishnevsky, I.N.
Опубліковано в: Вопросы атомной науки и техники (2001)

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

за авторством Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

за авторством Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

за авторством Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)