Photoluminescence of porous nc-Si—SiOx nanostructures treated by HF vapors by V. A. Danko, I. Z. Indutnyi, K. V. Mykhailovska, Ye. Shepeliavyi

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The influence of the periodic relief of the silicon substrate on polarization of photoluminescence observed in nc-Si–SiOx nanostructures by K. V. Mykhailovska, V. I. Mynko, I. Z. Indutnyi, Ye. Shepeliavyi

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The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures by V. V. Petrov, A. A. Kriuchyn, V. M. Rubish, S. A. Kostiukevych, Ye. Shepeliavyi

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Reversible photodarkening in composite As2S3/SiOx nanostructures by V. A. Danko, I. Z. Indutnyi, O. F. Kolomys, V. V. Strelchuk, Ye. Shepeliavyi

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Photoinduced etching of thin films of chalcogenide glasses by V. A. Danko, I. Z. Indutnyi, V. I. Mynko, Ye. Shepeliavyi, O. S. Lytvyn, M. V. Lukaniuk

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Photostimulated reversible changes in the Ge-Se films as a base of resistive process by I. V. Babiichuk, V. A. Danko, I. Z. Indutnyi, M. V. Lukaniuk, V. I. Mynko, Ye. Shepeliavyi

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Growth of the photonic nanostruc-tures using interference lithography and oblique deposition in vacuum by I. Z. Indutnyi, V. I. Mynko, Ye. Shepeliavyi, M. V. Sopinskyi, V. M. Tkach, V. A. Danko

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Photolithography on photostimulated reversible and transient structural changes in CHG by V. A. Danko, I. Z. Indutnyi, M. V. Lukaniuk, V. I. Mynko, S. S. Ponomarov, Ye. Shepeliavyi, V. O. Yukhymchuk

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Influence of laser light on the formation and properties of silicon nanocrystals in a-Si/Sn layered structures by V. B. Neimash, A. S. Nikolenko, V. V. Strelchuk, Ye. Shepeliavyi, P. M. Lytvynchuk, V. V. Melnyk, I. V. Olkhovyk

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Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon by V. B. Neimash, A. S. Nikolenko, V. V. Strelchuk, Ye. Shepeliavyi, P. M. Litvinchuk, V. V. Melnyk, I. V. Olhovik

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Control of plasmons excitation by P- and S-polarized light in gold nanowire gratings by azimuthal angle variation by V. A. Danko, I. Z. Indutnyi, V. I. Mynko, S. V. Mamykin, Ye. Shepeliavyi, M. V. Lukaniuk, P. M. Lytvyn

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Microstructure of thin Si−Sn composite films by V. B. Neimash, V. M. Poroshyn, O. M. Kabaldin, V. O. Yukhymchuk, Ye. Shepeliavyi, V. A. Makara, Yu. Larkin

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Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers by K. V. Mykhailovska, V. A. Danko, O. Y. Hudymenko, V. P. Kladko, I. Z. Indutnyi, Ye. Shepeliavyi, M. V. Sopinskyi

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Nanostructured Au chips with enhanced sensitivity for sensors based on surface plasmon resonance by I. Z. Indutnyi, Yu. V. Ushenin, V. I. Mynko, Ye. Shepeliavyi, M. V. Lukaniuk, A. A. Korchovyi, R. V. Khrystosenko

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Raman scattering in the process of tin-induced crystallization of amorphous silicon by V. B. Neimash, H. I. Dovbeshko, Ye. Shepeliavyi, V. A. Danko, V. V. Melnyk, M. V. Isaiev, A. H. Kuzmych

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Mechanism of tin-induced crystallization in amorphous silicon by V. B. Neimash, O. O. Hushcha, Ye. Shepeliavyi, V. O. Yukhymchuk, V. A. Danko, V. V. Melnyk, A. H. Kuzmych

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Tin doping effect on crystallization of amorphous silicon, obtained by vapor deposition in vacuum by V. B. Neimash, V. M. Poroshin, Ye. Shepeliavyi, V. O. Yukhymchuk, V. V. Melnyk, V. A. Makara, A. G. Kuzmich

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Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses by V. M. Kadan, I. Z. Indutnyi, V. A. Danko, Ye. Shepeliavyi, I. M. Dmytruk, P. I. Koreniuk, I. V. Blonskyi

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Tin-induced crystallization of amorphous silicon under pulsed laser irradiation by V. B. Neimash, V. Melnyk, L. L. Fedorenko, Ye. Shepeliavyi, V. V. Strilchuk, A. S. Nikolenko, M. V. Isaiev, A. H. Kuzmych

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Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation by V. B. Neimash, V. V. Melnyk, L. L. Fedorenko, Ye. Shepeliavyi, V. V. Strelchuk, A. S. Nikolayenko, M. V. Isaiev, A. G. Kuzmich

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