Features of electrochemical processes at the boundary p-GaAs-HF water solution von G. A. Pashchenko, Yu. Kravetskyi, L. I. Trishchuk

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Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing von G. A. Pashchenko, Yu. Kravetskyi, A. V. Fomin

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Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing von A. V. Fomin, G. A. Pashchenko, Yu. Kravetskyi, I. G. Lutsyshyn

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Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe von A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn

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Electrical properties of In/p-pbte structures von H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych

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Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes von A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn

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Peculiarities of preparation of CdTe p-n junctions and carrier transport in them von A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk

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Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes von V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko

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