Features of electrochemical processes at the boundary p-GaAs-HF water solution за авторством G. A. Pashchenko, Yu. Kravetskyi, L. I. Trishchuk

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Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing за авторством G. A. Pashchenko, Yu. Kravetskyi, A. V. Fomin

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Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing за авторством A. V. Fomin, G. A. Pashchenko, Yu. Kravetskyi, I. G. Lutsyshyn

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Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe за авторством A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn

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Electrical properties of In/p-pbte structures за авторством H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych

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Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes за авторством A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn

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Peculiarities of preparation of CdTe p-n junctions and carrier transport in them за авторством A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk

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Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes за авторством V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko

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