Features of electrochemical processes at the boundary p-GaAs-HF water solution by G. A. Pashchenko, Yu. Kravetskyi, L. I. Trishchuk

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Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing by G. A. Pashchenko, Yu. Kravetskyi, A. V. Fomin

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Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing by A. V. Fomin, G. A. Pashchenko, Yu. Kravetskyi, I. G. Lutsyshyn

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Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe by A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn

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Electrical properties of In/p-pbte structures by H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych

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Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes by A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn

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Peculiarities of preparation of CdTe p-n junctions and carrier transport in them by A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk

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Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes by V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko

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