Харвестер відкритої науки НАН України

Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

за авторством Moscal, D.S., Fedorenko, L.L., Yusupov, M.M., Golodenko, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Refractory contact to a-SiC produced by laser technology methods

за авторством Fedorenko, L.L., Kiseleov, V.S., Svechnikov, S.V., Yusupov, M.M., Beketov, G.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

The influence of Cr concentration on time resolution of GaAs detectors

за авторством Fedorenko, L.L., Linnik, L.F., Linnik, L.G., Yusupov, M.M., Solovyov, E.A., Sirmulis, E.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)