STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods
The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampe...
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| Datum: | 2024 |
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| Hauptverfasser: | , |
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DataverseUA
2024
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| Online Zugang: | https://doi.org/10.48788/DVUA/BCG5WO |
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| Назва журналу: | Open Data Repository of the National Academy of Sciences of Ukraine |
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Open Data Repository of the National Academy of Sciences of Ukraine| Zusammenfassung: | The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface.
The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties. |
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