STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods

The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampe...

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Bibliographic Details
Date:2024
Main Authors: Karbivskyy Volodymyr, Svitlana Smolyak
Other Authors: Smolyak, Svitlana
Published: DataverseUA 2024
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Online Access:https://doi.org/10.48788/DVUA/BCG5WO
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Journal Title:Open Data Repository of the National Academy of Sciences of Ukraine

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Open Data Repository of the National Academy of Sciences of Ukraine
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Summary:The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties.