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Surface chemscal states of Cu2HgGeSe4 studied by X-ray photoelectron spectroscopy

The electronic structure and surface chemical states of a Cu2HgGeSe4 single crystal, grown by the Bridgman–Stockbarger method, were investigated using X-ray photoelectron spectroscopy (XPS) for pristine and Ar+ ion-irradiated surfaces. High-resolution core-level XPS spectra (Cu 2p, Hg 4f, Ge 3d, Se...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2019
Автори: Tkach, Vira, O.Y. Khyzhun, N.M. Denysyuk, Luzhnyi Ivan Vasyliovych, Kopylova Kateryna Ihorivna
Формат: Data
Мова:Англійська
Опубліковано: DataverseUA 2019
Теми:
Chemistry
Engineering
Physics
Semiconductors
X-ray photoelectronic spectra
Electronic structure
Онлайн доступ:https://doi.org/10.48788/DVUA/DGS7UW
Теги: Додати тег
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Назва журналу:Open Data Repository of the National Academy of Sciences of Ukraine

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Open Data Repository of the National Academy of Sciences of Ukraine
Опис
Резюме:The electronic structure and surface chemical states of a Cu2HgGeSe4 single crystal, grown by the Bridgman–Stockbarger method, were investigated using X-ray photoelectron spectroscopy (XPS) for pristine and Ar+ ion-irradiated surfaces. High-resolution core-level XPS spectra (Cu 2p, Hg 4f, Ge 3d, Se 3d, Se 3p) and valence-band spectra were recorded before and after Ar+ ion sputtering to evaluate the core-level binding energies, chemical state preservation, and structural stability of the Cu2HgGeSe4 surface under ion-beam treatment.

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