Buchumschlag

Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

Experimental X-ray photoelectron spectroscopy (XPS) dataset collected for a Cs2HgI4 single crystal synthesized via the vertical Bridgman–Stockbarger method. The dataset encompasses wide-range survey energy scans, high-resolution core-level regions (Cs 3d, Hg 4f, and I 3d), as well as low-binding-ene...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Datum:	2014
Hauptverfasser:	Tkach, Vira, O.Y. Khyzhun, N.M. Denysіuk, Luzhnyi Ivan Vasyliovych
Format:	Data
Sprache:	Englisch
Veröffentlicht:	DataverseUA 2014
Schlagworte:	Chemistry Engineering Physics X-ray photoelectron spectroscopy (XPS) Semiconductors Electronic structure Cs2HgI4 Ternary halide semiconductor Core-level photoelectron spectra Valence band density of states Ion sputtering effect
Online Zugang:	https://doi.org/10.48788/DVUA/JSPAOF
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Open Data Repository of the National Academy of Sciences of Ukraine

Institution

Open Data Repository of the National Academy of Sciences of Ukraine

Ähnliche Einträge

Surface chemscal states of Cu2HgGeSe4 studied by X-ray photoelectron spectroscopy
von: Tkach, Vira, et al.
Veröffentlicht: (2019)

Analysis of Ag2CdSnS4 Compound by X-ray photoelectron spectroscopy
von: Tkach, Vira, et al.
Veröffentlicht: (2014)

High-Resolution XPS Dataset for TIHgBr₃ Single Crystals
von: O.Y. Khyzhun, et al.
Veröffentlicht: (2025)

Analysis of Ag2HgSnS4 Compound by X-ray photoelectron spectroscopy
von: Tkach, Vira, et al.
Veröffentlicht: (2014)

XPS experiment dataset for crystal Tl3PbBr5
von: O.Y. Khyzhun, et al.
Veröffentlicht: (2012)

Study of the electronic structure of Mn2-хCoxP2O7·5H2O at x=0.6, using X-ray photoelectron spectroscopy
von: Smolyak Svitlana, et al.
Veröffentlicht: (2025)

X-ray photoelectron spectroscopic study of the electronic structure of Mn₂₋ₓCoₓP₂O₇·5H₂O, at x=1.0
von: Smolyak Svitlana, et al.
Veröffentlicht: (2025)

Replication Data for: X-ray photoelectron spectroscopic study of the electronic structure of Co10Fe31B10Mo32Ge8Mn9 high-entropy alloy
von: Pazukha, Iryna, et al.
Veröffentlicht: (2026)

The electronic, structural and paramagnetic properties of magnesium telluride
von: Akinlami, J.O., et al.
Veröffentlicht: (2019)

Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures
von: Yurkovych, N.V., et al.
Veröffentlicht: (2018)

Electronic structure, optical, and photoelectrical properties of crystalline Si₂Te₃
von: Bletskan, D.I., et al.
Veröffentlicht: (2019)

Crystal structure and electrical properties of Ag₆PS₅I single crystal
von: Studenyak, I.P., et al.
Veröffentlicht: (2021)

New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects
von: Molodkin, V.B., et al.
Veröffentlicht: (2021)

Features of current transport in Al–Al₂O₃–-CdTe–Mo structure
von: Uteniyazov, A.K., et al.
Veröffentlicht: (2020)

Study of structural, electrical, and optical properties of MoRe₀.₀₀₁Se₁.₉₉₉ single crystal
von: Vora, A.M.
Veröffentlicht: (2020)

Structural and impedance studies of copper-enriched (Cu₀.₇₅Ag₀.₂₅)₇SiS₅I-based ceramics
von: Studenyak, I.P., et al.
Veröffentlicht: (2020)

Current-voltage characteristics of the injection photodetector based on M(In)-CdS-Si-M(In) structure
von: Sapaev, I.B., et al.
Veröffentlicht: (2019)

Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe
von: Uteniyazov, A.K., et al.
Veröffentlicht: (2019)

Transformation of structural defects in semiconductors under the action of electromagnetic and magnetic fields, causing resonant phenomena
von: Milenin, G.V., et al.
Veröffentlicht: (2019)

Growth-sector dependence of morphological, structural, and optical features in boron-doped HPHT diamond crystals
von: Strelchuk, V.V., et al.
Veröffentlicht: (2021)

Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂
von: Bletskan, D.I., et al.
Veröffentlicht: (2018)

Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
von: Milenin, G.V., et al.
Veröffentlicht: (2020)

Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data
von: Borcha, M.D., et al.
Veröffentlicht: (2019)

Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2019)

Dielectric properties of nematic liquid crystal with impurities of supramolecular Ni-TMTAA-TCNQ complexes
von: Vovk, V.E., et al.
Veröffentlicht: (2020)

Account of surface contribution to the thermodynamic properties of lead selenide films
von: Nykyruy, L.I., et al.
Veröffentlicht: (2019)

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
von: Syngaivska, G.I., et al.
Veröffentlicht: (2018)

Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
von: Latreche, A.
Veröffentlicht: (2021)

Comparative characteristics of TiO₂(Er₂O₃, Dy₂O₃)/por-SiC/SiC heterostructures (Review)
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2020)

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2018)

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface
von: Tatyanenko, N.P., et al.
Veröffentlicht: (2018)

Inversion of spin levels in exchange-coupled pairs under combined time reversal
von: Geru, I.I.
Veröffentlicht: (2018)

Model phonon spectra of Cu₇SiS₅I and Ag₇SiS₅I crystals
von: Nebola, I.I., et al.
Veröffentlicht: (2020)

Cyclotron radiation of semiconductor crystals
von: Milenin, G.V., et al.
Veröffentlicht: (2018)

Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes
von: Shashikala, B.N., et al.
Veröffentlicht: (2021)

Key parameters of commercial silicon solar cells with rear metallization
von: Sachenko, A.V., et al.
Veröffentlicht: (2019)

Nanostructured SiC as a promising material for the cold electron emitters
von: Goriachko, A.M., et al.
Veröffentlicht: (2021)

Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
von: Latreche, A.
Veröffentlicht: (2020)

Features of electrochemical processes at the boundary p-GaAs-HF water solution
von: Pashchenko, G.A., et al.
Veröffentlicht: (2018)

Effective minority carrier lifetime in double-sided macroporous silicon
von: Onyshchenko, V.F., et al.
Veröffentlicht: (2020)