MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-b...
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| Дата: | 2020 |
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| Мова: | English Ukrainian |
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National Technical University "Kharkiv Polytechnic Institute" and Аnatolii Pidhornyi Institute of Power Machines and Systems of NAS of Ukraine
2020
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| Онлайн доступ: | http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06 |
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| Назва журналу: | Electrical Engineering & Electromechanics |
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Electrical Engineering & Electromechanics| id |
eiekhpieduua-article-206156 |
|---|---|
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ojs |
| institution |
Electrical Engineering & Electromechanics |
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| datestamp_date |
2020-06-25T09:02:14Z |
| collection |
OJS |
| language |
English Ukrainian |
| topic |
GaN transistors computer simulation electromagnetics interferences energy efficiency 621.314 |
| spellingShingle |
GaN transistors computer simulation electromagnetics interferences energy efficiency 621.314 Onikienko, Y. O. Pilinsky, V. V. Popovych, P. V. Lazebnyi, V. S. Smolenska, O. I. Baran, V. S. MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS |
| topic_facet |
GaN-транзистори комп’ютерне моделювання електромагнітні завади енергоефективність 621.314 GaN transistors computer simulation electromagnetics interferences energy efficiency 621.314 |
| format |
Article |
| author |
Onikienko, Y. O. Pilinsky, V. V. Popovych, P. V. Lazebnyi, V. S. Smolenska, O. I. Baran, V. S. |
| author_facet |
Onikienko, Y. O. Pilinsky, V. V. Popovych, P. V. Lazebnyi, V. S. Smolenska, O. I. Baran, V. S. |
| author_sort |
Onikienko, Y. O. |
| title |
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS |
| title_short |
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS |
| title_full |
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS |
| title_fullStr |
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS |
| title_full_unstemmed |
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS |
| title_sort |
modelling of operation modes and electromagnetic interferences of gan-transistor converters |
| title_alt |
МОДЕЛЮВАННЯ РЕЖИМІВ РОБОТИ ТА ЕЛЕКТРОМАГНІТНИХ ЗАВАД ПЕРЕТВОРЮВАЧА НА GaN ТРАНЗИСТОРАХ |
| description |
Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-bridge converter built on the EPC2022 eGaN® transistors and contains a driver for controlling these transistors. To simplify the assessment of the conversion efficiency, it is suggested to use a computer model of the development board and LISN, which simulates the active load with the LC filter. Results. Simulation results of the converter efficiency with the nominal values of the elements according to the EPC9035 manual showed significant deviations from the calculated values at frequencies above 50 kHz. This is explained by the presence of inrush current through transistors. The inrush current depends on the «dead time» between the intervals when the transistors are open and the delays specified in the SPICE model of LM5113 driver. To reduce the amplitude of inrush current and, accordingly, to increase the duration of the «dead time» interval, it is proposed to double the capacitors responsible for the formation of this interval. Simulation of the converter efficiency with the doubled values of the circuit elements showed that the results almost coincide with the calculated values of the efficiency in the range from 0.05 MHz to 5 MHz. The converter on the EPC2022 transistors has the highest efficiency at 50 kHz which decreases by 0.03-0.04 at 500 kHz. Therefore, it is recommended that the operating frequency should be set close to 500 kHz. Simulation of EMI levels resulted that the difference in the duration of the «dead time» does not have a significant effect on the levels of simulated EMI. The largest difference between the simulation results and the experiment is observed at frequencies about 30 MHz and is 3-6 dB. Originality. For the first time, the computer model was used to calculate the efficiency of a half-bridge converter on GaN transistors at different frequencies. Practical significance. Considering the high output current, high operating voltage and short switching times, GaN transistors are promising for use in pulse generators, power supplies with operating frequencies exceeding 500 kHz, and in powerful Class D hi-fi amplifiers with small dimensions, such as automotive ones. |
| publisher |
National Technical University "Kharkiv Polytechnic Institute" and Аnatolii Pidhornyi Institute of Power Machines and Systems of NAS of Ukraine |
| publishDate |
2020 |
| url |
http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06 |
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eiekhpieduua-article-2061562020-06-25T09:02:14Z MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS МОДЕЛЮВАННЯ РЕЖИМІВ РОБОТИ ТА ЕЛЕКТРОМАГНІТНИХ ЗАВАД ПЕРЕТВОРЮВАЧА НА GaN ТРАНЗИСТОРАХ Onikienko, Y. O. Pilinsky, V. V. Popovych, P. V. Lazebnyi, V. S. Smolenska, O. I. Baran, V. S. GaN-транзистори комп’ютерне моделювання електромагнітні завади енергоефективність 621.314 GaN transistors computer simulation electromagnetics interferences energy efficiency 621.314 Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-bridge converter built on the EPC2022 eGaN® transistors and contains a driver for controlling these transistors. To simplify the assessment of the conversion efficiency, it is suggested to use a computer model of the development board and LISN, which simulates the active load with the LC filter. Results. Simulation results of the converter efficiency with the nominal values of the elements according to the EPC9035 manual showed significant deviations from the calculated values at frequencies above 50 kHz. This is explained by the presence of inrush current through transistors. The inrush current depends on the «dead time» between the intervals when the transistors are open and the delays specified in the SPICE model of LM5113 driver. To reduce the amplitude of inrush current and, accordingly, to increase the duration of the «dead time» interval, it is proposed to double the capacitors responsible for the formation of this interval. Simulation of the converter efficiency with the doubled values of the circuit elements showed that the results almost coincide with the calculated values of the efficiency in the range from 0.05 MHz to 5 MHz. The converter on the EPC2022 transistors has the highest efficiency at 50 kHz which decreases by 0.03-0.04 at 500 kHz. Therefore, it is recommended that the operating frequency should be set close to 500 kHz. Simulation of EMI levels resulted that the difference in the duration of the «dead time» does not have a significant effect on the levels of simulated EMI. The largest difference between the simulation results and the experiment is observed at frequencies about 30 MHz and is 3-6 dB. Originality. For the first time, the computer model was used to calculate the efficiency of a half-bridge converter on GaN transistors at different frequencies. Practical significance. Considering the high output current, high operating voltage and short switching times, GaN transistors are promising for use in pulse generators, power supplies with operating frequencies exceeding 500 kHz, and in powerful Class D hi-fi amplifiers with small dimensions, such as automotive ones. У роботі досліджено вплив частоти перетворення на ефективність роботи напівмостового перетворювача на GaN транзисторах. Наведено результати комп’ютерного моделювання такого перетворювача з урахуванням втрат на різних частотах. Показано, що запропонована комп’ютерна модель дозволяє визначити рівень струму споживання, а, отже, і ККД напівмостового перетворювача на GaN транзисторах. Моделювання з параметрами, взятими зі схеми від виробника призводить до завищених оцінок споживання струму до 2,3 рази. Зміна параметрів RC-кіл, що формують інтервал «мертвого часу» транзисторів зменшує похибку визначення струму споживання до менш як 5 %. Збільшення тривалості «мертвого часу» суттєво не впливає на точність моделювання несиметричних електромагнітних завад і призводить до зміни їх рівня в межах 3 дБ. У результаті дослідження встановлено, що комп’ютерна модель має достатню точність для оціночних розрахунків, а розглянуті перетворювачі на GaN транзисторах найкраще використовувати з частотами перетворення близько 500 кГц. Такі перетворювачі можуть знайти застосування в джерелах живлення бортової апаратури і автомобільних підсилювачах класу D. National Technical University "Kharkiv Polytechnic Institute" and Аnatolii Pidhornyi Institute of Power Machines and Systems of NAS of Ukraine 2020-06-25 Article Article application/pdf application/pdf http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06 10.20998/2074-272X.2020.3.06 Electrical Engineering & Electromechanics; No. 3 (2020); 37-42 Электротехника и Электромеханика; № 3 (2020); 37-42 Електротехніка і Електромеханіка; № 3 (2020); 37-42 2309-3404 2074-272X en uk http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06/206285 http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06/206286 Copyright (c) 2020 Y. O. Onikienko, V. V. Pilinsky, P. V. Popovych, V. S. Lazebnyi, O. I. Smolenska, V. S. Baran https://creativecommons.org/licenses/by-nc/4.0 |