MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS

• Дата: 2020
• Автори: Onikienko, Y. O., Pilinsky, V. V., Popovych, P. V., Lazebnyi, V. S., Smolenska, O. I., Baran, V. S.
• Формат: Стаття
• Мова: Англійська; Українська
• Опубліковано: National Technical University "Kharkiv Polytechnic Institute" and Аnatolii Pidhornyi Institute of Power Machines and Systems of NAS of Ukraine 2020
• Теми: GaN transistors; computer simulation; electromagnetics interferences; energy efficiency; 621.314
• Онлайн доступ: http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06
• Назва журналу: Electrical Engineering & Electromechanics

Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-b...