MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS

• Datum: 2020
• Hauptverfasser: Onikienko, Y. O., Pilinsky, V. V., Popovych, P. V., Lazebnyi, V. S., Smolenska, O. I., Baran, V. S.
• Format: Artikel
• Sprache: English; Ukrainian
• Veröffentlicht: National Technical University "Kharkiv Polytechnic Institute" and Аnatolii Pidhornyi Institute of Power Machines and Systems of NAS of Ukraine 2020
• Schlagworte: GaN transistors; computer simulation; electromagnetics interferences; energy efficiency; 621.314
• Online Zugang: http://eie.khpi.edu.ua/article/view/2074-272X.2020.3.06
• Назва журналу: Electrical Engineering & Electromechanics

Goal. To analyze the efficiency and EMI of a half-bridge converter built on GaN transistors at different switching frequencies and to issue recommendations for its application. Methodology. An EPC9035 development board from Efficient Power Conversion was selected for research. This board is a half-b...