Experimental evaluation of conducted disturbances induced during high frequency switching of active components

• Дата: 2023
• Автори: Slimani, H., Zeghoudi, A., Bendaoud, A., Bechekir, S.
• Формат: Стаття
• Мова: English
• Опубліковано: National Technical University "Kharkiv Polytechnic Institute" and Аnatolii Pidhornyi Institute of Power Machines and Systems of NAS of Ukraine 2023
• Теми: electromagnetic compatibility; electromagnetic disturbances; high frequency switching of active components; experimental measurement
• Онлайн доступ: http://eie.khpi.edu.ua/article/view/262591
• Назва журналу: Electrical Engineering & Electromechanics

Introduction. Power electronics devices are among the most widely used equipment in all fields. The increasing performance of these devices makes their electromagnetic interference factor very important. On the other hand, electromagnetic compatibility research is more and more interested in studies on the sources of electromagnetic disturbances, their propagation paths and the methods of reducing these electromagnetic disturbances. The purpose is to study the behavior of the various active power components at high frequency as well as the evaluation of their electromagnetic noise by using simulation and experimental measurement. Methods. In first time, the simulation was realized with the Lt-spice software which presents many advantages in its use and we validate in the second time the results obtained with experimental measurements. We start by study of the behavior of the diode, then the behavior of MOSFET transistor and finally the study of the behavior of the IGBT transistor. Results. All the simulations were performed using the Lt-spice software and the results obtained are validated by experimental measurements performed in the APELEC Laboratory at the University of Sidi Bel-Abbes in Algeria. The waveforms of the current and voltage across each component during its opening are presented. The results of the simulations are compared and validated with the realized measurements in order to better present the influence of the fast switching of semiconductors on the electrical quantities, which causes electromagnetic disturbances in the interconnected electrical system.