2025-02-23T11:45:22-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-100309%22&qt=morelikethis&rows=5
2025-02-23T11:45:22-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-100309%22&qt=morelikethis&rows=5
2025-02-23T11:45:22-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T11:45:22-05:00 DEBUG: Deserialized SOLR response
The injection photo diode on the basis of nSi-nCdS-n⁺CdS heterostructures
It is shown that the nSi-nCdS-n⁺CdS heterostructures in operative (carrying) direction of current, while being exposed to low intensity radiation, operate as injection photodiodes. Their current sensitivity is Sλ ≈ 2.12 A/W at λ = 0.625 µm, which effectively represents a 4.2 increase in compare...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Науковий фізико-технологічний центр МОН та НАН України
2013
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| Series: | Физическая инженерия поверхности |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/100309 |
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