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The temperature dependence of the band GAPSi

With the help of mathematical modeling of the thermal broadening of the energy levels studied the temperature dependence of the band gap semiconductors. In view of the temperature dependence of the effective mass of the density of states obtained graphs temperature dependence of the band gap. Inv...

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Bibliographic Details
Main Authors: Guliamov, G., Erkaboev, U.I., Sharibaev, N.Y.
Format: Article
Language:Russian
Published: Науковий фізико-технологічний центр МОН та НАН України 2013
Series:Физическая инженерия поверхности
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/100315
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