Transport processes in the low pressure gas discharge plasma
Plasma technologies for the film deposition and etching based on the ion flows application are intensively elaborated and used now. Some of the most important requirements imposed on the ion flows are homogeneity and monoenergeticity, what necessitate the analysis of processes of particles flow form...
Збережено в:
Дата: | 2003 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2003
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Назва видання: | Вопросы атомной науки и техники |
Теми: | |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/110612 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Transport processes in the low pressure gas discharge plasma / N.A. Azarenkov, A.A. Bizjukov, A.V. Gapon // Вопросы атомной науки и техники. — 2003. — № 1. — С. 153-156. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | Plasma technologies for the film deposition and etching based on the ion flows application are intensively elaborated and used now. Some of the most important requirements imposed on the ion flows are homogeneity and monoenergeticity, what necessitate the analysis of processes of particles flow formation in existing devices as well as under designing the new plasma technology devices [1-5]. On the base of the simple mathematical model the transport processes in the low pressure gas discharge are considered. It was assumed that the gas discharge is in steady state regime. For the nonmagnetized plasma free fall mode for ions and electrons is supposed and free fall mode is assumed only for ions if a constant external magnetic field is applied. Consideration is treated in the framework of 2D two liquid hydrodynamic plasma model. |
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