Transport processes in the low pressure gas discharge plasma

Plasma technologies for the film deposition and etching based on the ion flows application are intensively elaborated and used now. Some of the most important requirements imposed on the ion flows are homogeneity and monoenergeticity, what necessitate the analysis of processes of particles flow form...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2003
Автори: Azarenkov, N.A., Bizjukov, A.A., Gapon, A.V.
Формат: Стаття
Мова:English
Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2003
Назва видання:Вопросы атомной науки и техники
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/110612
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Transport processes in the low pressure gas discharge plasma / N.A. Azarenkov, A.A. Bizjukov, A.V. Gapon // Вопросы атомной науки и техники. — 2003. — № 1. — С. 153-156. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Plasma technologies for the film deposition and etching based on the ion flows application are intensively elaborated and used now. Some of the most important requirements imposed on the ion flows are homogeneity and monoenergeticity, what necessitate the analysis of processes of particles flow formation in existing devices as well as under designing the new plasma technology devices [1-5]. On the base of the simple mathematical model the transport processes in the low pressure gas discharge are considered. It was assumed that the gas discharge is in steady state regime. For the nonmagnetized plasma free fall mode for ions and electrons is supposed and free fall mode is assumed only for ions if a constant external magnetic field is applied. Consideration is treated in the framework of 2D two liquid hydrodynamic plasma model.