Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 МeV electrons

• Дата: 2007
• Автори: Astakhov, O., Finger, F., Carius, R., Lambertz, A., Neklyudov, I., Petrusenko, Yu., Borysenko, V., Barankov, D.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2007
• Назва видання: Вопросы атомной науки и техники
• Теми: Физика радиационных повреждений и явлений в твердых телах
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/110646
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 МeV electrons/ O. Astakhov, F. Finger, R. Carius, A. Lambertz, I. Neklyudov, Yu. Petrusenko, V.Borysenko, D. Barankov // Вопросы атомной науки и техники. — 2007. — № 2. — С. 39-42. — Бібліогр.: 16 назв. — англ.

Amorphous and microcrystalline silicon are well known materials for thin film large area electronics. The defects in the material are an important issue for the device quality and the manufacturing process optimization. We study defects in thin film silicon with electron spin resonance (ESR). In order to vary the defect density in a wide range 2 MeV electron bombardment at 100 K was applied with dose as high as 10¹⁸ e*cm⁻². Samples were investigated after deposition, after irradiation and between the annealing steps. The spin density (Ns) in the material was varied over 3 orders of magnitude. Strong satellites with g≈2.010 and g≈2.000 were observed on the shoulders of the dangling bond line. The initial Ns and the shape of the resonance line were restored after annealing.